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Author Wallauer, Jan ♦ Grumber, Christian ♦ Walther, Markus ♦ Polyakov, Vladimir ♦ Iannucci, Robert ♦ Cimalla, Volker ♦ Ambacher, Oliver
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ASYMMETRY ♦ CHARGE CARRIERS ♦ DEMBER EFFECT ♦ INDIUM ♦ INDIUM NITRIDES ♦ LASERS ♦ MASKING ♦ MICROSTRUCTURE ♦ OPTIMIZATION ♦ SUBSTRATES
Abstract Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-14
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 11


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