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Author Qiu, Chenguang ♦ Zhang, Zhiyong ♦ Yang, Yingjun ♦ Xiao, Mengmeng ♦ Ding, Li ♦ Peng, Lian-Mao
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARBON NANOTUBES ♦ CARRIER MOBILITY ♦ DEPOSITION ♦ EFFICIENCY ♦ ELECTRIC POTENTIAL ♦ EQUIPMENT ♦ FIELD EFFECT TRANSISTORS ♦ FILMS ♦ HAFNIUM OXIDES ♦ INTEGRATED CIRCUITS ♦ LAYERS ♦ LEAKS ♦ TEMPERATURE RANGE 0273-0400 K ♦ THICKNESS
Abstract Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4.5 nm or thinner) atomic-layer-deposition grown HfO{sub 2} as gate insulator, and shown to exhibit high gate efficiency, i.e., all examined (totally 76) devices present very low room temperature subthreshold swing with an averaged value of 64 mV/Dec, without observable carrier mobility degradation. The gate leakage of the CNT FET under fixed gate voltage is dependent not only on the thickness of HfO{sub 2} insulator, but also on the diameter of the CNT. The vertical scaling limit of CNT FETs is determined by gate leakage standard in ultra large scale integrated circuits. HfO{sub 2} film with effective oxide thickness of 1.2 nm can provide both excellent gate electrostatic controllability and small gate leakage for sub-5 nm FETs based on CNT with small diameter.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-09
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 19


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