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Author Hara, Tohru ♦ Onda, Takayuki ♦ Kakizaki, Yasuo ♦ Oshima, Sotaro ♦ Kitamura, Taira ♦ Kajiyama, Kenji ♦ Yoneda, Tomoaki ♦ Sekine, Kohei ♦ Inoue, Morio
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ ION IMPLANTATION ♦ HYDROGEN IONS ♦ DEFORMATION ♦ LAYERS ♦ SURFACE PROPERTIES
Abstract The delamination of a thin layer from a Si wafer by high dose H{sup +} implantation has been studied. This process is applicable to the manufacture of Si on insulator wafers. Hydrogen ions are implanted into (100) p-Si through a 100 nm thick oxide layer at 100 keV with doses of 1.0 {times} 10{sup 16} and 1.0 {times} 10{sup 17} ion/cm{sup 2}. The implanted layer is measured by 1.5 MeV He{sup +} Rutherford backscattering spectrometry aligned spectra and by cross-sectional transmission electron microscopy after annealing. With annealing at 600 C, delamination of the Si layer, which occurred parallel to the surface, could be observed clearly at a depth of 0.85 {micro}m for a dose of 1.0 {times} 10{sup 17} ion/cm{sup 2}. The gap of the split Si layer is 20--30 nm wide. The roughness of the split layer surface is 7.5 nm. Point defects at the split layer surface decreased with annealing at high temperatures.
ISSN 00134651
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-08-01
Publisher Place United States
Journal Journal of the Electrochemical Society
Volume Number 143
Issue Number 8


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