Thumbnail
Access Restriction
Open

Author Seager, C. H. ♦ Anderson, R. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ HYDROGENATION ♦ SCHOTTKY BARRIER DIODES ♦ CONTROL ♦ CHARGE STATES ♦ DIFFUSION ♦ HYDROGEN IONS ♦ ELECTRIC FIELDS
Abstract We demonstrate that periodic exposure to zero bias during {ital in} {ital situ} hydrogenation of reverse-biased {ital p}-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in {ital n}-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H{sup +} to H{sup {minus}} would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the {ital p}-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H{sup +} into the bulk. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-07-01
Publisher Department Sandia National Laboratory
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 80
Issue Number 1
Organization Sandia National Laboratory


Open content in new tab

   Open content in new tab