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Author Lidorikis, Elefterios ♦ Bachlechner, Martina E. ♦ Kalia, Rajiv K. ♦ Nakano, Aiichiro ♦ Vashishta, Priya ♦ Voyiadjis, George Z.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ SILICON ♦ SILICON NITRIDES ♦ SIMULATION ♦ SUBSTRATES
Abstract A hybrid molecular-dynamics (MD) and finite-element simulation approach is used to study stress distributions in silicon/silicon-nitride nanopixels. The hybrid approach provides atomistic description near the interface and continuum description deep into the substrate, increasing the accessible length scales and greatly reducing the computational cost. The results of the hybrid simulation are in good agreement with full multimillion-atom MD simulations: atomic structures at the lattice-mismatched interface between amorphous silicon nitride and silicon induce inhomogeneous stress patterns in the substrate that cannot be reproduced by a continuum approach alone.
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-20
Publisher Place United States
Journal Physical Review Letters
Volume Number 87
Issue Number 8


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