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Author Huang, C. J. ♦ Zuo, Y. H. ♦ Li, D. Z. ♦ Cheng, B. W. ♦ Luo, L. P. ♦ Yu, J. Z. ♦ Wang, Q. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ATOMIC FORCE MICROSCOPY ♦ CHEMICAL VAPOR DEPOSITION ♦ DEPOSITION ♦ ISLANDS ♦ PHYSICS ♦ SHAPE ♦ SUBSTRATES ♦ ULTRAHIGH VACUUM
Abstract The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 24


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