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Author Das, Poulomi ♦ Ibrahim, Sk ♦ Pal, Tanusri ♦ Chakraborty, Koushik ♦ Ghosh, Surajit
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CARBON OXIDES ♦ CHARGE TRANSPORT ♦ GRAPHENE ♦ MATHEMATICAL SOLUTIONS ♦ NANOCOMPOSITES ♦ PERFORMANCE ♦ PHOTOCURRENTS ♦ SURFACES ♦ THIN FILMS ♦ VISIBLE RADIATION
Abstract Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-24
Publisher Place United States
Volume Number 1665
Issue Number 1


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