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Author Park, Byung-Eun ♦ Ishiwara, Hiroshi
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINATES ♦ ANNEALING ♦ CAPACITANCE ♦ DIELECTRIC MATERIALS ♦ ELECTRIC FURNACES ♦ ELECTRICAL PROPERTIES ♦ LANTHANUM ♦ LEAKAGE CURRENT ♦ SUBSTRATES ♦ THICKNESS ♦ X-RAY DIFFRACTION
Abstract Lanthanum aluminate (LaAlO{sub 3}) films were deposited on Si(100) substrates by evaporating single-crystal pellets in vacuum using an electron-beam gun. Then, they were annealed in N{sub 2} ambience at 700{sup o}C for 10 min using an electric furnace. X-ray diffraction analysis showed that the LaAlO{sub 3} films were amorphous even after the annealing process. No hysteretic characteristics were observed in the capacitance--voltage (C--V) measurement and the dielectric constant of the LaAlO{sub 3} films was estimated to be 21--25. It was also found that the leakage current density decreased by about three orders of magnitude after the annealing process. On these films, Sr{sub 0.8}Bi{sub 2.2}Ta{sub 2}O{sub 9} films with 210 nm thickness were deposited by a sol--gel method. All samples annealed in O{sub 2} atmosphere at temperatures ranging from 650 to 750{sup o}C showed hysteretic C--V characteristics, and the memory window width in the sample annealed at 750{sup o}C for 30 min was about 3.0 V for a voltage sweep of {+-}10 V. It was also found that the capacitance values biased in the hysteresis loop were unchanged over 12 h. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


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