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Author Deng, X.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ SOLAR CELLS ♦ SILICON SOLAR CELLS ♦ SILICON ♦ SILICON ALLOYS ♦ AMORPHOUS STATE ♦ SEMICONDUCTOR JUNCTIONS ♦ THIN FILMS ♦ ELECTRICAL PROPERTIES ♦ QUANTUM EFFICIENCY ♦ ENERGY GAP ♦ FABRICATION
Abstract In this paper, we report the recent progress in our newly established amorphous silicon (a-Si) based photovoltaic research program at The University of Toledo (UT). Under the Thin Film Partnership subcontract which started in March 1998, we have achieved the fabrication of 1) wide bandgap a-Si solar cells with 1.02 V open circuit voltage using high hydrogen dilution for the i-layer deposition, 2) mid bandgap a-Si solar cells having a high fill factor of 0.732, 3) narrow bandgap a-SiGe solar cells with 8.3{percent} initial efficiency and a red response of nearly 50{percent} at 800 nm, and 4) triple-junction, spectrum-splitting a-Si/a-SiGe/a-SiGe solar cells with 9.7{percent} initial efficiency. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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