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Author Gladysiewicz, M. ♦ Janicki, L. ♦ Kudrawiec, R. ♦ Siekacz, M. ♦ Cywinski, G. ♦ Skierbiszewski, C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BOUNDARY CONDITIONS ♦ BUFFERS ♦ DISTRIBUTION ♦ ELECTRIC FIELDS ♦ FERMI LEVEL ♦ GALLIUM NITRIDES ♦ LAYERS ♦ POISSON EQUATION ♦ SPECTROSCOPY ♦ SURFACES ♦ THICKNESS ♦ TWO-DIMENSIONAL SYSTEMS
Abstract Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaN layers.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-28
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 26


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