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Author Erdmann, Andreas ♦ Henderson, Clifford L. ♦ Willson, C. Grant
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ PHYSICS ♦ REFRACTIVE INDEX ♦ THICKNESS
Abstract In many commercial and noncommercial photoresists the real and the imaginary parts of the refractive index are changed during exposure. Using a finite-difference beam-propagation algorithm, we analyze the impact of these nonlinear optical effects on the photolithographic process. Changes of the real part of the refractive index have a considerable impact on dose latitudes, sidewalls, swing curves, iso-dense bias and other process parameters. These effects become more dominant as the thickness of the resist layer increases. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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