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Author Fang, Feng ♦ Zhang, Yeyu ♦ Wu, Xiaoqin ♦ Shao, Qiyue ♦ Xie, Zonghan
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ AMORPHOUS STATE ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ MAGNETRONS ♦ NITROGEN ADDITIONS ♦ PARTIAL PRESSURE ♦ POLYESTERS ♦ POSITRON COMPUTED TOMOGRAPHY ♦ SPUTTERING ♦ STOICHIOMETRY ♦ SUBSTRATES ♦ TEMPERATURE RANGE 0273-0400 K ♦ THIN FILMS ♦ TIN OXIDES ♦ VISIBLE RADIATION
Abstract Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 68


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