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Author Keerthi, K. ♦ Nair, B. G. ♦ Philip, R. R. ♦ Masuzawa, T. ♦ Saito, I. ♦ Okano, K. ♦ Johns, N.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CARRIERS ♦ CONNECTORS ♦ COPPER ♦ COPPER COMPOUNDS ♦ ELECTRIC CONTACTS ♦ ELECTRONIC STRUCTURE ♦ ENERGY GAP ♦ HETEROJUNCTIONS ♦ INDIUM OXIDES ♦ IRRADIATION ♦ PHOTOCONDUCTIVITY ♦ PHOTOELECTRON SPECTROSCOPY ♦ PHOTOVOLTAIC EFFECT ♦ P-N JUNCTIONS ♦ SILICON ♦ SOLAR CELLS ♦ ULTRAVIOLET RADIATION
Abstract Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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