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Author Kumar, Mukesh ♦ Singh, R. ♦ Kumar, Vikram
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword NANOSCIENCE AND NANOTECHNOLOGY ♦ CATALYSTS ♦ CHEMICAL VAPOR DEPOSITION ♦ GALLIUM NITRIDES ♦ NANOWIRES ♦ OPTICAL PROPERTIES ♦ PHOTOLUMINESCENCE ♦ SCANNING ELECTRON MICROSCOPY ♦ SPECTRA ♦ SUBSTRATES ♦ TEMPERATURE DEPENDENCE ♦ X-RAY DIFFRACTION
Abstract Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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