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Author Fricke, K. ♦ Krozer, V. ♦ Hartnagel, H.L.
Sponsorship IEEE Microwave Theory and Techniques Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Gallium arsenide ♦ MESFETs ♦ Power transmission lines ♦ Electrodes ♦ Attenuation ♦ Power generation ♦ FETs ♦ Frequency ♦ Thermal resistance ♦ Thermal conductivity
Abstract A GaAs microwave power MESFET structure is described that achieves a significant improvement of the gate mode attenuation by incorporating a suitably terminated transmission line parallel to the gate. The reduced attenuation allows a much wider single gate (a factor of 4 is possible) and a corresponding improvement of the total output power. It is shown that this approach leads to higher gain and cutoff frequency. An additional advantage of this MESFET structure is its higher input resistance relative to a device with equal total gate width but more gates in parallel. This results in simpler matching circuits of greater bandwidth. The single-gate structure can be connected in parallel to further increase the total output power. The results of an electrical characterization of the devices are presented, and its advantages and potential application are discussed.<<ETX>>
Description Author affiliation :: Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany
ISSN 00189480
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1989-09-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 37
Issue Number 9
Size (in Bytes) 587.71 kB
Page Count 6
Starting Page 1334
Ending Page 1339


Source: IEEE Xplore Digital Library