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Author Chaudhuri, P. ♦ Ray, P. P. ♦ Gupta, Dutta N. ♦ Longeaud, C. ♦ Roy, D. ♦ Maudre, R. ♦ Vignoli, S.
Source IACS Kolkata
Content type Text
File Format PDF
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword L03 (Electro-(in)organic, chemical features of electrical devices) ♦ L01 (Glass including composition, forming, but not containers) ♦ U11 (Semiconductor Materials and Processes) ♦ U12 (Discrete Devices, e.g. LEDs, photovoltaic cells)
Abstract NOVELTY - Preparation of an silicon-based solar cell having the structure of glass/tin oxide/p-a-hydrogen doped silicon carbide/i-ahydrogen doped silicon/n-a-hydrogen doped silicon/aluminum, involves depositing the p-a-hydrogen doped silicon carbide, i-a-hydrogen doped silicon and n-a-hydrogen doped silicon layers on tin oxide coated glass substrate by radio frequency assisted plasma enhanced chemical vapor deposition in single chamber apparatus using argon dilution of 90-95% for all layers.
Education Level UG and PG
Learning Resource Type Article