Thumbnail
Access Restriction
Open

Author Brauer, G. ♦ Anwand, W. ♦ Nicht, E. ♦ Kuriplach, J. ♦ Sob, M. ♦ Wagner, N. ♦ Coleman, P. G. ♦ Puska, M. J. ♦ Korhonen, T.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ SILICON CARBIDES ♦ ELECTRONIC STRUCTURE ♦ RADIATION CHEMISTRY ♦ VACANCIES ♦ NITROGEN ADDITIONS ♦ BINDING ENERGY ♦ WORK FUNCTIONS ♦ ELECTRONS ♦ POSITRONS
Abstract First-principles electronic structure and positron-state calculations for perfect and defected 3C- and 6H-SiC polytypes of SiC have been performed. Monovacancies and divacancies have been treated; the influence of lattice position and nitrogen impurities have been considered in the former case. Positron affinities and binding energies have been calculated; trends are discussed, and the results compared with recent atomic superposition method calculations. Experimental determination of the electron and positron work functions of the same 6H-SiC allows an assessment of the accuracy of the present first-principles calculations, and to suggest further improvements. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-07-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 54
Issue Number 4


Open content in new tab

   Open content in new tab