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Author Zilberberg, Omer ♦ Weiss, Shlomo ♦ Toledo, Sivan
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2013
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Computer architecture ♦ Hybrid memory systems ♦ Main memory ♦ Phase change memory
Abstract This article surveys the current state of phase-change memory (PCM) as a nonvolatile memory technology set to replace flash and DRAM in modern computerized systems. It has been researched and developed in the last decade, with researchers providing better architectural designs which address the technology's main challenges—its limited write endurance, potential long latency, high energy writes, power dissipation, and some concerns for memory privacy. Some physical properties of the technology are also discussed, providing a basis for architectural discussions. Also briefly shown are other architectural alternatives, such as FeRAM and MRAM. The designs surveyed in this article include read before write, wear leveling, write cancellation, write pausing, some encryption schemes, and buffer organizations. These allow PCM to stand on its own as a replacement for DRAM as main memory. Designs for hybrid memory systems with both PCM and DRAM are also shown and some designs for SSDs incorporating PCM.
ISSN 03600300
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2013-07-03
Publisher Place New York
e-ISSN 15577341
Journal ACM Computing Surveys (CSUR)
Volume Number 45
Issue Number 3
Page Count 33
Starting Page 1
Ending Page 33


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Source: ACM Digital Library