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Author Harima, Y. ♦ Okazaki, H. ♦ Kunugi, Y. ♦ Yamashita, K. ♦ Ishii, H. ♦ Seki, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SCHOTTKY BARRIER DIODES ♦ PHOTOCURRENTS ♦ INTERFACES ♦ SEMICONDUCTOR MATERIALS ♦ METALS ♦ PORPHYRINS ♦ ELECTRONIC STRUCTURE ♦ PHOTOCONDUCTIVITY ♦ ELECTRON-HOLE COUPLING ♦ WORK FUNCTIONS ♦ P-TYPE CONDUCTORS ♦ N-TYPE CONDUCTORS ♦ SURFACE STATES ♦ OPTOELECTRONIC DEVICES
Abstract In order to clarify electronic structures of molecular semiconductor/metal interfaces, a Schottky{endash}Mott rule is examined for vacuum-sublimed films of two kinds of porphyrins, which have similar chemical structures, but opposite conductance types. The result shows that Schottky barrier heights are simply determined by the difference in work function between the porphyrin solids and metals irrespective of the conductance types of the porphyrin semiconductors, indicative of negligible influence of surface states on the Schottky barrier formation. Measurements of photocurrent generation efficiencies at these Schottky junctions indicate that a surface recombination process is not a major deactivation route for electron-hole pairs generated in the molecular semiconductors by light. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-08-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 8


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