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Author Luo, X. D. ♦ Xu, Z. Y. ♦ Ge, W. K. ♦ Pan, Z. ♦ Li, L. H. ♦ Lin, Y. W.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword PHYSICS OF ELEMENTARY PARTICLES AND FIELDS ♦ ALLOYS ♦ EXCITATION ♦ EXCITONS ♦ LASERS ♦ PHOTOLUMINESCENCE ♦ PHYSICS ♦ RECOMBINATION ♦ SPECTRA
Abstract Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (PL) emission from GaNAs/GaAs single quantum wells (QWs). It dominates the PL spectra under high excitation and/or at high temperature. By measuring the PL dependence on both temperature and excitation power and by analyzing the time-resolved PL results, we have attributed the PL peak to the recombination of delocalized excitons in QWs. Furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent PL spectra under the short pulse excitation. This competition is believed to be responsible for the temperature-induced S-shaped PL shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 7


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