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Author Cho, J. ♦ Zhang, Z. ♦ Lee, S. ♦ Kang, M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM ARSENIDES ♦ ELECTRONIC STRUCTURE ♦ SURFACE PROPERTIES ♦ ADSORPTION ♦ ARSENIC ♦ DESORPTION ♦ PHOTOEMISSION
Abstract The atomic structure of the As-covered GaAs(110) surface in one-monolayer coverage is studied using the pseudopotential density-functional theory. We compare the adsorption geometry of As/GaAs(110) with that of the well-studied isoelectronic Sb/GaAs(110) system and discuss the large difference in the desorption temperature found in both systems, based on the calculated adsorption energies. In addition, we calculate the As 3d and Ga 3d core-level shifts at As/GaAs(110) using initial-state theory. Our calculations not only produce well the surface components resolved in a recent photoemission experiment, but predict an additional surface core level for the substrate As atom bonded to the adsorbed As atom. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-05-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 59
Issue Number 19


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