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Author Aireddy, H. ♦ Bhaumik, S. ♦ Das, A. K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONNECTORS ♦ DOPED MATERIALS ♦ ELECTRIC CONTACTS ♦ ELECTRIC FIELDS ♦ ELECTRONIC STRUCTURE ♦ ENERGY BEAM DEPOSITION ♦ FERRITES ♦ HETEROJUNCTIONS ♦ IRON OXIDES ♦ LASER RADIATION ♦ MAGNETITE ♦ MAGNETORESISTANCE ♦ PHOSPHORUS IONS ♦ PULSED IRRADIATION ♦ SEMICONDUCTOR MATERIALS ♦ SILICON OXIDES ♦ TEMPERATURE RANGE 0273-0400 K
Abstract We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-07
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 23


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