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Author Watkins, G. D. ♦ Corbett, J. W. ♦ Walker, R. M.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword RADIATION EFFECTS ON MATERIALS ♦ ATOMS ♦ DEFECTS ♦ ELECTRONS ♦ INTERSTITIAL ATOMS ♦ INTERSTITIALS ♦ LATTICES ♦ LOW TEMPERATURE ♦ OXYGEN ♦ PHOSPHORUS ♦ QUARTZ ♦ RADIATION EFFECTS ♦ RESONANCE ♦ SEMICONDUCTORS ♦ SILICON ♦ SPIN ♦ VACANCIES
Abstract The spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are interpreted as containing impurity atoms and as having formed when the impurities trap mobile interstitials and/or vacancies. In quartz crucible grown silicon, the imparity may be oxygen. In the floating zone material, the impurity appears to be the phosphorus used in the doping. A 20 deg K irradiation and anneal is described which suggests the temperatures at which this defect motion is occurring. Features of the spin resonance spectra suggest that the vacancy may be the mobile effect. (auth)
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-08-01
Publisher Department General Electric Co., Schenectady, N.Y.
Journal Journal of Applied Physics
Volume Number 30
Organization General Electric Co., Schenectady, N.Y.


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