|Author||Watkins, G. D. ♦ Corbett, J. W. ♦ Walker, R. M.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||RADIATION EFFECTS ON MATERIALS ♦ ATOMS ♦ DEFECTS ♦ ELECTRONS ♦ INTERSTITIAL ATOMS ♦ INTERSTITIALS ♦ LATTICES ♦ LOW TEMPERATURE ♦ OXYGEN ♦ PHOSPHORUS ♦ QUARTZ ♦ RADIATION EFFECTS ♦ RESONANCE ♦ SEMICONDUCTORS ♦ SILICON ♦ SPIN ♦ VACANCIES|
|Abstract||The spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are interpreted as containing impurity atoms and as having formed when the impurities trap mobile interstitials and/or vacancies. In quartz crucible grown silicon, the imparity may be oxygen. In the floating zone material, the impurity appears to be the phosphorus used in the doping. A 20 deg K irradiation and anneal is described which suggests the temperatures at which this defect motion is occurring. Features of the spin resonance spectra suggest that the vacancy may be the mobile effect. (auth)|
|Learning Resource Type||Article|
|Publisher Department||General Electric Co., Schenectady, N.Y.|
|Journal||Journal of Applied Physics|
|Organization||General Electric Co., Schenectady, N.Y.|
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