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Author Chun, J. -S. ♦ Desjardins, P. ♦ Lavoie, C. ♦ Shin, C. -S. ♦ Cabral, C. ♦ Petrov, I. ♦ Greene, J. E.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DEPLETION LAYER ♦ DIFFUSION BARRIERS ♦ STACKING FAULTS ♦ TIN 111 ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ ULTRAHIGH VACUUM ♦ X-RAY DIFFRACTION
Abstract Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges at T{sub s}=700{degree}C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at T{sub s}=100{degree}C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650{degree}C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620{degree}C consist of continuous {approx_equal}7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with {approx_equal}22 nm thick tetragonal Al{sub 3}Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al{sub 3}Ti formation. TEM analyses of bilayers annealed at 650{degree}C (10{degree}C below the Al melting point!) reveal only the self-limited growth of an {approx_equal}3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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