|Author||MacKay, J. W. ♦ Klontz, E. E.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||RADIATION EFFECTS ON MATERIALS ♦ ANNEALING ♦ ATOMS ♦ DEFECTS ♦ ELECTRIC CHARGES ♦ ELECTRONS ♦ GERMANIUM ♦ INTERSTITIAL ATOMS ♦ INTERSTITIALS ♦ LATTICES ♦ LOW TEMPERATURE ♦ RADIATION EFFECTS ♦ RECOVERY ♦ SEMICONDUCTORS ♦ STABILITY ♦ VACANCIES|
|Abstract||>Irradiation at ~ 10 deg K using 1.10-Mev electrons produces very different changes in the electrical properties of a-type Ge as compared to those produced in p-type Ge. In n-type Ge, more carriers are removed per incident electron at 10 deg K than at 78 deg K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34 deg K and 64 deg K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p-type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p-type sample to 130 deg K produces no measurable change. It is concluded that the stability of close-vacancy-interstitial pairs against recombination is less in p type than in n-type Ge. A qualituiive argument as to the origin of this difference in stability is presented. (auth)|
|Learning Resource Type||Article|
|Publisher Department||Purdue Univ., Lafayette, Ind.|
|Journal||Journal of Applied Physics|
|Organization||Purdue Univ., Lafayette, Ind.|
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