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Author MacKay, J. W. ♦ Klontz, E. E.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword RADIATION EFFECTS ON MATERIALS ♦ ANNEALING ♦ ATOMS ♦ DEFECTS ♦ ELECTRIC CHARGES ♦ ELECTRONS ♦ GERMANIUM ♦ INTERSTITIAL ATOMS ♦ INTERSTITIALS ♦ LATTICES ♦ LOW TEMPERATURE ♦ RADIATION EFFECTS ♦ RECOVERY ♦ SEMICONDUCTORS ♦ STABILITY ♦ VACANCIES
Abstract >Irradiation at ~ 10 deg K using 1.10-Mev electrons produces very different changes in the electrical properties of a-type Ge as compared to those produced in p-type Ge. In n-type Ge, more carriers are removed per incident electron at 10 deg K than at 78 deg K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34 deg K and 64 deg K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p-type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p-type sample to 130 deg K produces no measurable change. It is concluded that the stability of close-vacancy-interstitial pairs against recombination is less in p type than in n-type Ge. A qualituiive argument as to the origin of this difference in stability is presented. (auth)
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-08-01
Publisher Department Purdue Univ., Lafayette, Ind.
Journal Journal of Applied Physics
Volume Number 30
Organization Purdue Univ., Lafayette, Ind.


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