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Author Stephenson, G. B. ♦ Eastman, J. A. ♦ Thompson, C. ♦ Auciello, O. ♦ Thompson, L. J. ♦ Munkholm, A. ♦ Fini, P. ♦ DenBaars, S. P. ♦ Speck, J. S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ GALLIUM NITRIDES ♦ CHEMICAL VAPOR DEPOSITION ♦ EPITAXY ♦ X-RAY DIFFRACTION ♦ GROWTH ♦ ADVANCED PHOTON SOURCE ♦ SURFACE PROPERTIES ♦ SCATTERING
Abstract We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-05-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 22


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