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Author Ditchfield, R. ♦ Seebauer, E. G.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ATOMS ♦ DEFECTS ♦ DEPOSITION ♦ DIFFUSION ♦ ION BEAMS ♦ VACANCIES
Abstract We offer a revised mechanism to describe our previous measurements of surface diffusion under low-energy ion bombardment in the Ge/Si(111) system. We show that direct ion-induced motion of diffusing atoms (the effect commonly cited as important in ion beam assisted deposition) cannot account for these observations. Instead, we rationalize the results through processes in which ions create long-lived surface vacancies or spatially extended defects that heal continuously during bombardment. These ideas rationalize several important aspects of the experimental data that were previously unexplained, including the appearance of ion effects at very low ion fluxes, the simple Arrhenius behavior of the diffusivity, the rough magnitudes of the observed energy thresholds, and the ion-induced inhibition of diffusion at high temperatures.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-03-15
Publisher Place United States
Journal Physical Review B
Volume Number 63
Issue Number 12


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