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Author Soibel, Alexander ♦ Rafol, Sir B. ♦ Khoshakhlagh, Arezou ♦ Nguyen, Jean ♦ Hoglund, Linda ♦ Fisher, Anita M. ♦ Keo, Sam. A. ♦ Ting, David Z. -Y. ♦ Gunapala, Sarath D.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DIFFUSION BARRIERS ♦ GALLIUM ANTIMONIDES ♦ INDIUM ARSENIDES ♦ IRRADIATION ♦ LEAKAGE CURRENT ♦ MEV RANGE 10-100 ♦ PERFORMANCE ♦ PHOTODIODES ♦ PROTONS ♦ SURFACES ♦ TEMPERATURE DEPENDENCE ♦ TRAPS ♦ TUNNEL EFFECT ♦ WAVELENGTHS
Abstract In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λ{sub c} = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from j{sub d} = 5 × 10{sup −5} A/cm{sup 2} to j{sub d} = 6 × 10{sup −3} A/cm{sup 2}, at V{sub b} = 0.1 V, T = 80 K and fluence 19.2 × 10{sup 11 }H{sup +}/cm{sup 2}. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-28
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 26


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