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Author Bedair, S. M. ♦ Harmon, Jeffrey L. ♦ Carlin, C. Zachary ♦ Hashem Sayed, Islam E. ♦ Colter, P. C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM ARSENIDES ♦ ANNEALING ♦ ATOMS ♦ DIAGNOSTIC TECHNIQUES ♦ DOPED MATERIALS ♦ GALLIUM ARSENIDES ♦ INTERFACES ♦ PERFORMANCE ♦ PHOTOVOLTAIC EFFECT ♦ SIMULATION ♦ TUNNEL EFFECT ♦ TUNNEL JUNCTIONS
Abstract The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 20


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