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Author Yu, C. ♦ Li, J. ♦ Song, X. B. ♦ Liu, Q. B. ♦ Cai, S. J. ♦ Feng, Z. H. ♦ He, Z. Z.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIER MOBILITY ♦ ELECTRONIC EQUIPMENT ♦ EPITAXY ♦ FIELD EFFECT TRANSISTORS ♦ GHZ RANGE ♦ GRAPHENE ♦ LAYERS ♦ LENGTH ♦ SEMICONDUCTOR MATERIALS ♦ SILICON CARBIDES
Abstract Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 1


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