Thumbnail
Access Restriction
Open

Author Shrotriya, Vipin ♦ Rajaram, P.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ANNEALING ♦ AQUEOUS SOLUTIONS ♦ CHALCOPYRITE ♦ CHELATING AGENTS ♦ COPPER CHLORIDES ♦ COPPER SULFIDES ♦ CRYSTALS ♦ EV RANGE ♦ INDIUM CHLORIDES ♦ INDIUM SELENIDES ♦ NANOSTRUCTURES ♦ OPTICAL PROPERTIES ♦ PYROLYSIS ♦ SCANNING ELECTRON MICROSCOPY ♦ SELENIUM OXIDES ♦ SUBSTRATES ♦ THIN FILMS ♦ THIOUREA ♦ X-RAY DIFFRACTION
Abstract The effect of annealing CuInSSe thin films, which were grown on glass substrates using the spray pyrolysis technique from spray solutions having S/Se ionic ratio 0.6, were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical transmission measurements. The CuInSSe films were co-deposited from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2}. EDC was used as a complexing agent and films were deposited at the constant temperature 300°C. Post annealing (at 350°C) was used to improve the structural, morphological and optical properties of CuInSSe thin films. From the results, it is found that the films are single phase, p-type in conductivity having the chalcopyrite structure. From the Scherrer formula the average size of the films was found to be in the range (15-28) nm. Optical studies show that the optical band gap value increases slightly from 1.35 eV to 1.37 eV with annealing for films grown from spray solutions having S/Se ionic ratio 0.6.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-28
Publisher Place United States
Volume Number 1675
Issue Number 1


Open content in new tab

   Open content in new tab