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Author Wertheim, G. K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword METALS, CERAMICS, AND MATERIALS ♦ ACTIVATION ♦ ANNIHILATION ♦ DEFECTS ♦ ELECTRON BEAMS ♦ ENERGY ♦ LOW TEMPERATURE ♦ SEMICONDUCTORS ♦ TEMPERATURE
Abstract A model is proposed to explain the observed dependence of the defect production rate on temperature when semiconductors are bombarded with electrons of sufficient energy to produce vacancy-interstitial pairs. The decreased defect density observed after lowtemperature bombardment may be due to the production of a metastable vacancy-interstitial pair which may either anneal or form the defect usually observed. A temperature dependence in ihe production rate arises if these two competing processes have different activation energies. (auth)
ISSN 0031899X
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-08-01
Publisher Department Bell Telephone Labs., Murray Hill, N.J.
Journal Physical Review
Volume Number 115
Organization Bell Telephone Labs., Murray Hill, N.J.


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