Thumbnail
Access Restriction
Open

Author Sonder, E.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher American Institute of Physics (AIP)
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ATOMS ♦ DEFECTS ♦ ELECTRIC CONDUCTIVITY ♦ ENERGY LEVELS ♦ FISSION ♦ HALL EFFECT ♦ INTERSTITIAL ATOMS ♦ INTERSTITIALS ♦ LATTICES ♦ LOW TEMPERATURE ♦ MAGNETISM ♦ NEUTRONS ♦ RADIATION DOSES ♦ RADIATION EFFECTS ♦ REACTORS ♦ SEMICONDUCTORS ♦ SILICON ♦ SUSCEPTIBILITY ♦ TEMPERATURE ♦ VACANCIES
Abstract BS>Magnetic susceptibility measurements above 3 deg K and Hall effect and resistivity determinations between 50 and 300 deg K are reported for n-type silicon samples irradiated with increasingly higher doses of fission neutrons. The paramagnetism due to electronic states in the forbidden gap shows an initial decrease after short irradiation but a reversal, increase, and final saturation at a value less than that originally contributed to the paramagnetism by the filled donors after longer irradiation. The Hall coefficient shows evidence of a distribution of irradiation-produced energy levels in the neighborhood of 0.3 ev below the conduction band. The mobility goes through an initial sharp decrease with irradiation but recovers partially after longer irradiations. The results are discussed in terms of several models of radiation damage. It is concluded that a simple model based on uniformly dispersed interstitials and vacancies is not adequate to explain the results and that interactions between centers, and nonuniform distribution of damage will probably have to be taken into consideration.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-01-01
Publisher Department Oak Ridge National Lab., Tenn.
Journal Journal of Applied Physics
Volume Number 30
Issue Number 8
Organization Oak Ridge National Lab., Tenn.


Open content in new tab

   Open content in new tab