Thumbnail
Access Restriction
Open

Author Raj, Vidur ♦ Chauhan, Amit Kumar Singh ♦ Gupta, Govind
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ AUGER ELECTRON SPECTROSCOPY ♦ CRYSTAL STRUCTURE ♦ DESORPTION ♦ EPITAXY ♦ INDIUM ♦ INTERFACES ♦ LAYERS ♦ PHASE STABILITY ♦ PHASE TRANSFORMATIONS ♦ SEMICONDUCTOR MATERIALS ♦ SILICON ♦ SUBSTRATES ♦ SURFACES ♦ TEMPERATURE DEPENDENCE ♦ THIN FILMS
Abstract Graphical abstract: Controlled growth of indium atoms on Si(1 1 2) surface has been carried out systematically and the influence of substrate temperature on the kinetics is analysed under various growth conditions. Temperature induced anomalous layer-to-clusters transformation during thermal desorption has also been reported. - Highlights: • Controlled growth of indium atoms on Si(1 1 2) surface & their thermal stability. • Influence of substrate temperature on the kinetics under various growth conditions. • Temperature induced layer-to-clusters transformation during thermal desorption. - Abstract: The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(1 1 2) surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250 °C follows Frank–van der Merve growth mode whereas at temperatures ≥450 °C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250 °C grown In/Si(1 1 2) systems show temperature induced rearrangement of In atoms over Si(1 1 2) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(1 1 2) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 °C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(1 1 2) surface.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 72


Open content in new tab

   Open content in new tab