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Author Lin, Chun-Cheng ♦ Tang, Jian-Fu ♦ Su, Hsiu-Hsien ♦ Hong, Cheng-Shong ♦ Huang, Chih-Yu ♦ Chu, Sheng-Yuan
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ COMPLIANCE ♦ DIFFUSION ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRIC FIELDS ♦ ELECTRIC POTENTIAL ♦ ELECTROCHEMISTRY ♦ EMISSION ♦ IMPEDANCE ♦ LITHIUM IONS ♦ MEMORY DEVICES ♦ RANDOMNESS ♦ SPECTROSCOPY ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ TRANSPORT THEORY ♦ ZINC OXIDES
Abstract The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 24


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