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Author Schweinler, H. C.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS AND MATHEMATICS ♦ ARSENIC 75 ♦ CAPTURE ♦ DECAY ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRONS ♦ ENERGY ♦ ENERGY RANGE ♦ EV RANGE ♦ GALLIUM 71 ♦ GAMMA RADIATION ♦ GERMANIUM ♦ PHOSPHORUS 31 ♦ RECOILS ♦ SELENIUM 77 ♦ SILICON ♦ THERMAL NEUTRONS
Abstract The average value of the kinetic energy of recoil following thermal neutron capture and subsequent gammaray emission is 780 ev in silicon and 180 ev in germanium. For every neutron captured in silicon, 0.04 P/sup 31/ atom (therefore, 0.04 excess electron) are formed by radioactive decay. For every neutron captured in germanium, 0.098 As/sup 75/, 0.012 Se/sup 77/ (therefore, 0.l22 excess electron), and 0.304 Ga/sup 71/ atom (therefore, 0.304 excess hole) are ultimately formed, in this time sequence. Analysis of an experiment of J. W. Cleland on the decay of irradiated n-type germanium gives 0.8 electron removed from the conduction band per initially recoiling germanium atom. (auth)
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-08-01
Publisher Department Oak Ridge National Lab., Tenn.
Journal Journal of Applied Physics
Volume Number 30
Organization Oak Ridge National Lab., Tenn.


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