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Author Hur, Ji-Hyun ♦ Lee, Dongsoo ♦ Jeon, Sanghun
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COMPUTERIZED SIMULATION ♦ ELECTRODES ♦ LAYERS ♦ MONTE CARLO METHOD ♦ OXYGEN ♦ RANDOMNESS ♦ TRAPS ♦ TUNNEL EFFECT ♦ VACANCIES ♦ ZIRCONIUM OXIDES
Abstract A model that describes bilayered bipolar resistive random access memory (BL-ReRAM) switching in oxide with a large band gap is presented. It is shown that, owing to the large energy barrier between the electrode and thin oxide layer, the electronic conduction is dominated by trap-assisted tunneling. The model is composed of an atomic oxygen vacancy migration model and an electronic tunneling conduction model. We also show experimentally observed three-resistance-level switching in Ru/ZrO{sub 2}/TaO{sub x} BL-ReRAM that can be explained by the two types of traps, i.e., shallow and deep traps in ZrO{sub 2}.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 20


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