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Author Chang, Yoon Jung ♦ Woo, Jason C. S. ♦ Simmonds, Paul J. ♦ Beekley, Brett ♦ Goorsky, Mark S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DOPED MATERIALS ♦ ELECTRICAL PROPERTIES ♦ GALLIUM ARSENIDES ♦ MOLECULAR BEAM EPITAXY ♦ OPTIMIZATION ♦ SILICON OXIDES ♦ STRAINS ♦ SUBSTRATES ♦ SURFACE ENERGY ♦ SURFACES ♦ TRAPPING
Abstract Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO{sub 2} mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p{sup +}–Si/n{sup +}–GaAs p–n diodes.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 16


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