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Author Sirikumara, Hansika I. ♦ Jayasekera, Thushari
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BUFFERS ♦ DENSITY FUNCTIONAL METHOD ♦ ELECTRONS ♦ EPITAXY ♦ GRAPHENE ♦ HYDROGEN 4 ♦ INTERFACES ♦ LAYERS ♦ OXIDATION ♦ SILICATES ♦ SILICON CARBIDES ♦ SUBSTRATES ♦ SURFACES
Abstract Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 21


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