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Author Cheng, Y. T. ♦ Huang, Y. S. ♦ Lin, D. Y. ♦ Tiong, K. K. ♦ Pollak, Fred H. ♦ Evans, K. R.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword PHYSICS OF ELEMENTARY PARTICLES AND FIELDS ♦ BUFFERS ♦ ELECTRON GAS ♦ ELECTRON MOBILITY ♦ PHOTONS ♦ PHYSICS ♦ SHAPE ♦ SPECTROSCOPY ♦ SUPERLATTICES ♦ TRANSISTORS
Abstract Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N{sub s}) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 7


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