Thumbnail
Access Restriction
Open

Author Sieger, M. T. ♦ Luh, D. A. ♦ Miller, T. ♦ Chiang, T.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ INTERFACES ♦ SILICON OXIDES ♦ ELECTRONIC STRUCTURE ♦ PHOTOEMISSION ♦ FINE STRUCTURE ♦ BOND LENGTHS ♦ INTERFACE STRUCTURE ♦ CORE LEVELS
Abstract High-resolution Si 2{ital p} core level photoemission spectra of the SiO{sub 2}/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt. {copyright} {ital 1996 The American Physical Society.}
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-09-01
Publisher Department University of Illinois
Publisher Place United States
Journal Physical Review Letters
Volume Number 77
Issue Number 13
Organization University of Illinois


Open content in new tab

   Open content in new tab