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Author Kuznetsov, Vladimir L. ♦ Vai, Alex T. ♦ Edwards, Peter P. ♦ Al-Mamouri, Malek ♦ Stuart Abell, J. ♦ Pepper, Michael
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BOROSILICATE GLASS ♦ CARRIERS ♦ CERAMICS ♦ DOPED MATERIALS ♦ ELECTRONS ♦ ENERGY BEAM DEPOSITION ♦ GRAIN BOUNDARIES ♦ LASER RADIATION ♦ POLYCRYSTALS ♦ PULSED IRRADIATION ♦ SILICON OXIDES ♦ SOL-GEL PROCESS ♦ SUBSTRATES ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE MEASUREMENT ♦ THIN FILMS ♦ ZINC OXIDES
Abstract Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-07
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 23


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