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Author Lo, C. W. ♦ Shuh, D. K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ♦ MATERIALS SCIENCE ♦ SILICON ♦ ELECTRONIC STRUCTURE ♦ ETCHING ♦ CHEMICAL BONDS ♦ FERMI LEVEL ♦ WORK FUNCTIONS ♦ XENON FLUORIDES ♦ ELEMENTS ♦ ENERGY LEVELS ♦ FLUORIDES ♦ FLUORINE COMPOUNDS ♦ FUNCTIONS ♦ HALIDES ♦ HALOGEN COMPOUNDS ♦ RARE GAS COMPOUNDS ♦ SEMIMETALS ♦ SURFACE FINISHING ♦ XENON COMPOUNDS ♦ Chemical & Physicochemical Properties ♦ Other Materials- Physical Properties- (1992-)
Abstract The work function and Fermi level pinning position of Si(111) exposed to XeF[sub 2] are measured with soft x-ray photoemission spectroscopy. The exposures range from the chemisorption of F on Si(111)-7[times]7 to steady-state etching. The work function increases monotonically with XeF[sub 2] exposure. The Fermi level is pinned near midgap after each exposure, but moves upwards towards the conduction band as the exposure is increased. The results are discussed in terms of the electronic structure of the surface reaction layer, and a chemical etching mechanism is proposed.
ISSN 07342101
Educational Use Research
Learning Resource Type Article
Publisher Date 1993-07-01
Publisher Place United States
Journal Journal of Vacuum Science and Technology, A
Volume Number 11
Issue Number 4


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