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Author He, Y. ♦ Bouzidi, S. ♦ Han, B. ♦ Yu, L. ♦ Thiry, P. A. ♦ Caudano, R. ♦ Debever, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ PHOTOELECTRON SPECTROSCOPY ♦ ELECTRONIC STRUCTURE ♦ ULTRAVIOLET SPECTRA ♦ HYDROGENATION ♦ PASSIVATION ♦ ENERGY-LEVEL DENSITY ♦ CONDUCTION BANDS ♦ ANGULAR RESOLUTION ♦ VALENCE BANDS ♦ SURFACE STATES
Abstract The valence bands of the unreconstructed H-Si(111)-1{times}1 are investigated using angle-resolved ultraviolet photoelectron spectroscopy. The high quality of the surface and the absence of reconstruction allow us to observe bulk bands comparable to theoretical calculations. The asymmetric dispersion of the valence bands along the {bar {ital M}}{prime}{bar {Gamma}}{bar {ital M}} direction of the surface Brillouin zone confirms the asymmetry observed for the conduction bands. Such an asymmetry, stemming from the fact that the family of (11{bar 2}) planes are not mirror planes in the bulk of Si, provides a supplementary means of disentangling bulk states from surface states. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-12-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 54
Issue Number 24


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