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Author Reed, M. A. ♦ Chen, J. ♦ Rawlett, A. M. ♦ Price, D. W. ♦ Tour, J. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ MEMORY DEVICES ♦ PHYSICS ♦ RETENTION ♦ ELECTRONIC EQUIPMENT
Abstract Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times {gt}15 min have been observed. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 23


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