Thumbnail
Access Restriction
Open

Author Prabakaran, K. ♦ Ramesh, R. ♦ Jayasakthi, M. ♦ Loganathan, R. ♦ Arivazhagan, P. ♦ Baskar, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ATOMIC FORCE MICROSCOPY ♦ CHEMICAL VAPOR DEPOSITION ♦ CRYSTAL GROWTH ♦ EMISSION SPECTRA ♦ EMISSION SPECTROSCOPY ♦ GALLIUM NITRIDES ♦ INDIUM COMPOUNDS ♦ ORGANOMETALLIC COMPOUNDS ♦ PHOTOLUMINESCENCE ♦ QUANTUM WELLS ♦ SAPPHIRE ♦ SUBSTRATES ♦ THICKNESS ♦ WAVELENGTHS
Abstract The InGaN/GaN SQW structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition (MOCVD). The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit the composition of indium was found to be 10% and thickness was around 5nm and 10nm. The Photoluminescence emission was found to be shifited towards lower wavelength as 479nm, 440nm on increasing the thickness. The photoluminescence intensity was degrades with increases of InGaN thickness. Atomic force microscopy studies were also carried out and the results are discussed in detail.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-24
Publisher Place United States
Volume Number 1665
Issue Number 1


Open content in new tab

   Open content in new tab