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Author Ciccarelli, C. ♦ Ferguson, A. J. ♦ Campion, R. P. ♦ Gallagher, B. L.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABUNDANCE ♦ ALUMINIUM ♦ CRYOSTATS ♦ DOPED MATERIALS ♦ ELECTRONS ♦ EVAPORATION ♦ IMPURITIES ♦ REFRIGERATION ♦ TRANSISTORS
Abstract In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-02-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 5


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