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Author Wang, Xianjie ♦ Zhao, Xiaofeng ♦ Hu, Chang ♦ Zhang, Yang ♦ Song, Bingqian ♦ Zhang, Lingli ♦ Liu, Weilong ♦ Lv, Zhe ♦ Zhang, Yu ♦ Sui, Yu ♦ Tang, Jinke ♦ Song, Bo
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRIC POTENTIAL ♦ FILMS ♦ LASERS ♦ LAYERS ♦ RELAXATION TIME ♦ SEMICONDUCTOR JUNCTIONS ♦ SENSITIVITY ♦ SURFACES ♦ TIN SELENIDES
Abstract In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm{sup −1}. The optical response time and the relaxation time of the LPE are about 100 ns and 2 μs, respectively. The current-voltage curve on the surface of the SnSe film indicates the formation of an inversion layer at the SnSe/p-Si interface. Our results clearly suggest that most of the excited-electrons diffuse laterally in the inversion layer at the SnSe/p-Si interface, which results in a large LPE with ultrafast relaxation time. The high positional sensitivity and ultrafast relaxation time of the LPE make the SnSe/p-Si junction a promising candidate for a wide range of optoelectronic applications.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 2


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