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Author Okada, Hiroshi ♦ Shinohara, Masatohi ♦ Kondo, Yutaka ♦ Sekiguchi, Hiroto ♦ Yamane, Keisuke ♦ Wakahara, Akihiro
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANNEALING ♦ DEPOSITION ♦ FABRICATION ♦ GALLIUM NITRIDES ♦ HYDROCHLORIC ACID ♦ MATHEMATICAL SOLUTIONS ♦ OXIDES ♦ SILICON NITRIDES ♦ SURFACE TREATMENTS ♦ SURFACES ♦ TEMPERATURE RANGE 0273-0400 K ♦ TRANSISTORS ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-02-01
Publisher Place United States
Volume Number 1709
Issue Number 1


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