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Author Kang, Dong-Ho ♦ Hong, Seong-Taek ♦ Oh, Aely ♦ Kim, Seung-Hwan ♦ Yu, Hyun-Yong ♦ Park, Jin-Hong
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRONIC STRUCTURE ♦ LASER RADIATION ♦ MOLYBDENUM ♦ MOLYBDENUM SULFIDES ♦ PHOTODETECTORS ♦ RAMAN SPECTROSCOPY ♦ RECOMBINATION ♦ REDUCTION ♦ SEMICONDUCTOR MATERIALS ♦ SILICON OXIDES ♦ ZINC OXIDES
Abstract Highlights: • We have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. • ZnO doping improved the electrical parameters of MoS{sub 2} transistor (I{sub on}↑, μ{sub FE}↑, n↑). • The reduction of ZnO doping effect (ΔV{sub TH}: ∼75% ↓) was observed in air. • The highest photoresponsivity of ZnO-doped MoS{sub 2} photodetector was 3.18 × 10{sup 3} A/W. • The highest detectivity of ZnO-doped MoS{sub 2} photodetector was 5.94 × 10{sup 12} Jones. - Abstract: In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (I{sub D}–V{sub G} with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS{sub 2}-based electronics (I{sub on}↑, μ{sub FE}↑, n↑) owing to reduction of the effective barrier height between the source and the MoS{sub 2} channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV{sub TH} of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS{sub 2} photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 10{sup 3} A/W) and detectivity (5.94 × 10{sup 12} Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-10-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 82


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